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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION *With TO-3PL package *High speed switching *High VCBO *Wide area of safe operation APPLICATIONS *For high-speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 25 5 3.5 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IC=10A ;IB=2A IC=10A ;IB=2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=10A ; VCE=5V IC=1A ; VCE=10V;f=1MHz 15 8 MIN 400 2SC3874 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 V V A A 20 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=10A; VCC=150V IB1=2A;IB2=-4A 0.7 2.0 0.3 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3874 Fig.2 Outline dimensions (unindicated tolerance:0.50mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3874 4 |
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